Abstract submission will open May 15, 2021

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MAM 2021 will be the 30th in a series of conferences devoted to research on materials and processes for the back and front end of the line, including interconnect and silicide materials. Starting as a workshop on refractory metals and silicides in the 1980s and moving towards materials for advanced metallization in 1995, the 2020 conference also aims to address new challenges in the fields of materials for stretchable and bendable electronics, micro-electro-mechanical systems, emerging nanoscale devices as well as process and device modeling and simulation.

 

The objective of the conference is to provide a forum for open discussions across fundamental and applied sciences and industrial applications. It is dedicated to international material scientists, process and integration engineers, and students.

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Keynote presentations and invited talks will be given by scientific and technical leaders in each of the key areas to present the current state-of-the-art and to stimulate technical discussions.

 

The safety and well-being of our community is of utmost importance.

Given the travel and other pending local and global restrictions, the organizing committee has decided to keep the option of having the MAM 2021 conference in virtual mode.

 

In case we receive permission to conduct the conference “in real life”, and assuming travel restrictions are lifted, we will try to switch to a hybrid model. Local attendees and attendees who are allowed to travel will be physically in the conference room while other attendees will attend the conference virtually.

 

Location

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This year’s conference will be held in Tel Aviv Israel.

 

Key dates

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Abstract submission deadline: August 15th, 2021

Notification of paper acceptance: September 10th, 2021

Registration: Open starting June 1st, 2021

Submission of full-length papers: TBD

 

1-page abstracts (optionally including figures) should be submitted by email to yosish@eng.tau.ac.il.

Full-length papers will be published in a special issue of Microelectronic Engineering.

 

The areas of particular interest for this special issue are: 

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Materials, Processes & Integration 

• Metallization for advanced interconnects: local interconnects, contacts, metal gates, through silicon vias, power semiconductors 

• Dielectrics: porous ULK, hybrid materials, pore sealing & stuffing, MOF, patterning, cleaning, restoration, surface functionalization 

• Metal or dielectric liners and diffusion barriers: etch-stop, capping 

• Deposition: PVD, CVD, ALD, ELD, ECD, SAMs, reflow, e-beam 

• Patterning processes and integration: double & triple patterning, advanced etching techniques, Atomic Layer Etching (ALE) 

• Planarization: CMP, slurry, pad, anti-corrosion methods 

• Device integration and novel architectures: local interconnects 

• Silicides and germanides 

• Contacts to III-V materials: CMOS, power, LED, Laser, photonics applications 

• Materials for memories and memristive devices 

• 1D and 2D Nanomaterials: graphene, carbon nanotubes, nanowires, nanodots 

• 2D & 3D Packaging materials and technologies 

 

Advanced Characterization and Modeling techniques 

• Analytical techniques: defect inspection, X-ray/electron tomography, spectroscopy, microscopy, scanning probe methods, atom probe tomography, correlative methods 

• Reliability and failure analysis: lifetime extrapolation methodologies, chip-package interaction (CPI) 

• Modeling and simulation of process steps: equipment, interconnect systems, materials properties, nanoscale devices, reliability, all with experimental validations 

 

Applications including nanoscale 

• 3D integration: COW, WOW, thinning, bonding, TSV, micro-bumps 

• System-on-chip and system-in-package 

• Memories devices: MRAM, FeRAM, CBRAM, PCRAM, ReRAM 

• Quantum Devices 

• Power Electronics / IGBTs and materials / interconnects for GaN & SiC 

• MEMS/NEMS: sensors and actuators 

• Biochips: electrodes, microfluidics control, heterogeneous integration